Hall Effect Parameters of Aluminium and Tungsten Co-Doped VO2 Thin Films

Authors

Mohamed Mussa, Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, TanzaniaFollow
Nuru R Mlyuka, Department of Physics, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, TanzaniaFollow
Margaret E Samiji, Department of Physics, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, TanzaniaFollow

Section

Physical Sciences

Abstract

The Hall Effect parameters of Al and W co-doped VO2 thin films were studied in order to explain the effect of co-doping on the electrical properties of thermochromic VO2 films. The carrier concentrations and conductivity of the films were found to increase with increase in temperature while carrier mobility decreased reaching a minimum around the transition temperature then slightly rose and became stable at high temperatures. Tungsten doped films displayed higher carrier concentrations and conductivity on both sides of the metal insulator transition and lower mobility compared to undoped and Al and W co-doped VO2 thin films.

Recommended Citation

Mussa, Mohamed; Mlyuka, Nuru R; and Samiji, Margaret E (2018) "Hall Effect Parameters of Aluminium and Tungsten Co-Doped VO2 Thin Films," Tanzania Journal of Science: Vol. 44: Iss. 4, Article 10.
Available at:https://doi.org/10.65085/2507-7961.1738