ORCID
https//orcid.org/0000-0002-7846-5575
Abstract
This study reports on the influence of substrate temperature on the properties of Ag-doped TiO2 thin films. The films were deposited by reactive DC co-sputtering of Ti and Ag targets at different substrate temperatures and Ag target sputtering powers. Grazing incident X-ray diffractometer confirmed that all films were polycrystalline with dominant peak oriented along (101) planes representing the anatase TiO2 phase. The average grain size of the samples improved with increase in deposition temperature. At a substrate temperature of 450 ℃, the samples had a dominant peak representing the rutile phase, suggesting partial transformation from anatase to rutile phase. The electrical conductivity of the samples increased with increase in substrate temperature; however, the average solar transmittance was decreased. Ag doping increased the electrical conductivity of the TiO2 samples by one order of magnitude compared to the undoped ones. A good compromise between the electrical conductivity (1.304 (Ωcm)-1) and solar transmittance (>62%) was obtained at a substrate temperature of 400 ℃ and Ag dopant concentrations of 0.2% and 0.28% as determined by Rutherford Backscattering measurements. These results demonstrate the potential of Ag doping and optimisation of deposition conditions for the realisation of TiO2 based transparent conducting oxide that meets requirements for practical applications in optoelectronic devices. However, investigation of the effects of Ag-doped TiO2 transparent contact on the performance of these devices, particularly thin film solar cells, is important. This can also include gaining insight on the quality of the interface between Ag-doped TiO2 transparent contact and solar cells’ layers and hence device performance.
Recommended Citation
Sawa, H. B. (2025). Influence of Substrate Temperature on the Properties of Reactive DC Magnetron Co-Sputtered Ag-doped TiO2 Thin Films. Tanzania Journal of Engineering and Technology, 44(1), 1-17. https://doi.org/https://doi.org/10.52339/tjet.v44i1.987
Publisher Name
University of Dar es Salaam
Included in
Biochemical and Biomolecular Engineering Commons, Electronic Devices and Semiconductor Manufacturing Commons, Other Operations Research, Systems Engineering and Industrial Engineering Commons