ORCID
https://orcid.org/0000-0001-5600-7277
Abstract
NiO-TiO2 is a fascinating p-n semiconducting binary metal oxide with unique electronic and optical properties. The NiO-TiO2 has been synthesized using complicated preparation methods and expensive precursors that hamper their large-scale production. The present study reports the preparation of NiO-TiO2 semiconductor with improved physicochemical properties. NiO-TiO2 samples were prepared through one-pot sol-gel synthesis process followed by sintering of the as-synthesized materials at temperatures ranging from 600 to 1000 °C. The role of thermal treatment and NiO content on the microstructures was exquisitely studied. The microstructure of the NiO-TiO2 samples was examined by Raman spectroscopy, XRD, XRF, SEM-EDAX, high resolution TEM, and UV-visible DRS analyses. It was revealed that the calcination temperature and the NiO content were crucial factors influenced the crystallization temperature, phase transformation, particle size and optical properties of the obtained NiO-TiO2 systems. The incorporation of NiO in the TiO2 microstructure generated photoactive materials with band gap energies ranging from 2.5 eV to 2.8 eV. NiTiO3 system was observed in the calcined samples due to interaction of NiO and TiO2. Therefore, in order to synthesize NiO-TiO2 semiconductors with appealing physico-chemical properties the selection of precursors and optimization of the preparation method and calcination temperature are very important. The current study hence elucidates a facile one-pot sol-gel approach to synthesize homogeneous binary metal oxide systems with controlled morphology and crystal structure in the absence of additives.
Recommended Citation
Shao, G. N. (2024). Sol-gel synthesis and Microstructure Characterization of NiO-TiO2 Semiconductor. Tanzania Journal of Engineering and Technology, 43(1), 1-13. https://doi.org/https://doi.org/10.52339/tjet.v43i1.970
Publisher Name
University of Dar es Salaam
Included in
Catalysis and Reaction Engineering Commons, Electronic Devices and Semiconductor Manufacturing Commons, Numerical Analysis and Computation Commons, Other Operations Research, Systems Engineering and Industrial Engineering Commons